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Ушбу иш иқтибос қилган ишлар

10 та иш

Иш: Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

  1. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    МақолаSemiconductor materials and interfacesTechnical Physics201319 иқтибос
    ABI

  2. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +3

    МақолаMetal and Thin Film MechanicsTechnical Physics201315 иқтибос
    ABI

  3. Molecular Beam Epitaxy and Heterostructures

    Leroy L. Chang, K. H. Ploog

    Китоб19859 иқтибос
    ABI

  4. Superstructured ordering in Al x Ga1 − x As and Ga x In1 − x P alloys

    П. В. Середин, �. P. Domashevskaya, I. N. Arsentyev +3

    Мақола20136 иқтибос
    ABI

  5. Semiconductor lasers with internal wavelength selection

    V. V. Zolotarev, A. Yu. Leshko, A. V. Lyutetskiĭ +10

    Мақола20133 иқтибос
    ABI

  6. Temperature-dependent excitonic absorption in long-period multiple In x Ga1 − x As/GaAs quantum well structures

    S. A. Vaganov, R. P. Seĭsyan

    Мақола20112 иқтибос
    ABI

  7. Lateral photoconductivity of AlGaAs/InGaAs structures with quantum wells and self-organized quantum dots under interband illumination

    O. A. Shegaǐ, A. K. Bakarov, A. K. Kalagin +1

    Мақола20052 иқтибос
    ABI

  8. First-principle calculations of electronic and positronic properties of AlGaAs2

    S. Laref, S. Méçabih, B. Abbar +2

    Мақола20072 иқтибос
    ABI

  9. Trapping of charge carriers into InAs/AlAs quantum dots at liquid-helium temperature

    D. S. Abramkin, К. С. Журавлев, Т. С. Шамирзаев +2

    Мақола20112 иқтибос
    ABI

  10. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI