Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods
Б. Е. УмирзаковInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, Akademgorodok, Tashkent, 100125, UzbekistanД. А. ТашмухамедоваInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, Akademgorodok, Tashkent, 100125, UzbekistanМ. К. РузибаеваInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, Akademgorodok, Tashkent, 100125, UzbekistanA. K. TashatovInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, Akademgorodok, Tashkent, 100125, UzbekistanS. B. DonaevInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, Akademgorodok, Tashkent, 100125, UzbekistanB. B. MavlyanovInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, Akademgorodok, Tashkent, 100125, Uzbekistan
ABI
Аннотация
The energy band diagram of multilayer nanofilm systems formed on the basis of Si, GaAs, and CaF2 is constructed. The optimal regimes of obtaining homogeneous films of a complex composition are determined.
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