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Ушбу ишга иқтибос қилган ишлар

15 та иш

Иш: Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

  1. Structure and Properties of a Bilayer Nanodimensional CoSi2/Si/CoSi2/Si System Obtained by Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    МақолаIon-surface interactions and analysisTechnical Physics201814 иқтибос
    ABI

  2. Energy Threshold of the Atomic and Cluster Sputtering of Some Elements under Bombardment with Cs, Rb, and Na Ions

    R. Djabbarganov, Б.Г. Атабаев, З. А. Исаханов +1

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201914 иқтибос
    ABI

  3. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    МақолаIon-surface interactions and analysisTechnical Physics201513 иқтибос
    ABI

  4. Escape Depth of Secondary and Photoelectrons from CdTe Films with a Ba Film

    Б. Е. Умирзаков, Д. А. Ташмухамедова, M. A. Tursunov +2

    МақолаElectron and X-Ray Spectroscopy TechniquesTechnical Physics201912 иқтибос
    ABI

  5. Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing

    Samad Nimatov, Б. Е. Умирзаков, F. Ya. Khudaikulov +1

    МақолаIon-surface interactions and analysisTechnical Physics20198 иқтибос
    ABI

  6. Modification of the Surface Properties of Free Si–Cu Films by Implantation of Active Metal Ions

    З. А. Исаханов, И.О. Косимов, Б. Е. Умирзаков +1

    МақолаSemiconductor materials and interfacesTechnical Physics20208 иқтибос
    ABI

  7. Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

    Kh. Kh. Boltaev, J. Sh. Sodikjanov, Д. А. Ташмухамедова +1

    МақолаSemiconductor materials and devicesTechnical Physics20177 иқтибос
    ABI

  8. Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

    Y. S. Ergashov, Burkhon Donaev, Sherzod Khudainazarov +1

    МақолаElectron and X-Ray Spectroscopy TechniquesE3S Web of Conferences20216 иқтибос
    ABI

  9. The Effect of the Formation of Silicides on the Resistivity of Silicon

    Б. Е. Умирзаков, Д. А. Ташмухамедова, G. Kh. Allayarova +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20195 иқтибос
    ABI

  10. Emissivity of Laser-Activated Pd–Ba Alloy

    S. B. Donaev, Б. Е. Умирзаков, N. M. Mustafaeva

    МақолаLaser Material Processing TechniquesTechnical Physics20195 иқтибос
    ABI

  11. The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface

    Б. Е. Умирзаков, Р. Х. Ашуров, S. B. Donaev

    МақолаSemiconductor materials and interfacesTechnical Physics20194 иқтибос
    ABI

  12. Electronic and Optical Properties of NiSi2/Si Nanofilms

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +1

    МақолаSurface and Thin Film PhenomenaTechnical Physics20193 иқтибос
    ABI

  13. Formation of Nanodimensional SiO2 Films on the Surface of a Free Si/Cu Film System by $${\text{O}}_{2}^{ + }$$ Ion Implantation

    Б. Е. Умирзаков, М. К. Рузибаева, З. А. Исаханов +1

    МақолаIon-surface interactions and analysisTechnical Physics20192 иқтибос
    ABI

  14. Fabrication of Cd–Ba–S Nanoscale Structures on the Surface and in the Near-Surface Region of CdS Films by Implantation with Ba+ Ions

    J. Sh. Sodikjanov, Б. Е. Умирзаков

    МақолаQuantum Dots Synthesis And PropertiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20211 иқтибос
    ABI

  15. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

    I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

    МақолаSemiconductor materials and interfacesE3S Web of Conferences20211 иқтибос
    ABI