S. T. Abraeva

5 та иш

Karimov Tashkent State Technical University, 100095, Tashkent, Uzbekistan

1. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose

   А.С. Рысбаев, J. B. Khujaniyozov, M.T. Normuradov +3

   МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20203 иқтибос

   ABIABI:AkademIndex/openalex/2020.article.000353

2. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

   I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

   МақолаSemiconductor materials and interfacesE3S Web of Conferences20211 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.571863

3. Peculiarities of Photoelectron Spectra of Ge Implanted with Na-=SUP=-+-=/SUP=- Ions

   S. T. Abraeva, Д. А. Ташмухамедова, M. B. Yusupjanova +1

   МақолаIon-surface interactions and analysisПисьма в журнал технической физики20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.006069

4. Impact of bombardment by Ar⁺, Na⁺ and <i>O</i>₂⁺ ions on spectra of elastically scattered electrons of single-crystal Ge

   S. T. Abraeva, Д. А. Ташмухамедова, Soadat Gulyamova +2

   МақолаSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.009656

5. Epitaxial Growth of Ge Nanofilms on the Surface of SrF2

   S. T. Abraeva, Д. А. Ташмухамедова, Б. Е. Умирзаков

   МақолаSemiconductor materials and devicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.013288