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M.T. Normuradov

11 та иш

Beiruni State Technical University, ul. Universitetskaya 2, Tashkent, 100011, Uzbekistan

  1. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    МақолаSemiconductor materials and interfacesTechnical Physics20149 иқтибос
    ABI

  2. Peculiarities of BaTiO<sub>3</sub> in electronic and X-Ray analysis

    M.T. Normuradov, Ш. Т. Хожиев, L.B. Akhmedova +3

    МақолаSolid-state spectroscopy and crystallographyE3S Web of Conferences20236 иқтибос
    ABI

  3. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose

    А.С. Рысбаев, J. B. Khujaniyozov, M.T. Normuradov +3

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20203 иқтибос
    ABI

  4. Preparation of Calcium Titanate Perovskite Compound, Optical and Structural Properties

    Khujamkul Davranov, M.T. Normuradov, Muzaffar Davlatov +3

    МақолаPerovskite Materials and ApplicationsEast European Journal of Physics20242 иқтибос
    ABI

  5. Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

    M.T. Normuradov, A. S. Risbaev, J. B. Khujaniyozov +1

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20202 иқтибос
    ABI

  6. The influence of laser annealing on the surface state of ion doped silicon

    I.N. Kodirov, A. K. Tashatov, Б. Е. Умирзаков +1

    МақолаLaser Material Processing Techniques19950 иқтибос
    ABI

  7. The modification of structure and properties of semiconductors surface by active metals ions implantation

    А.С. Рысбаев, M.T. Normuradov, Б. Е. Умирзаков

    МақолаIon-surface interactions and analysis19990 иқтибос
    ABI

  8. About silicide production in silicon during implantation of barium and alkali ions

    А.С. Рысбаев, M.T. Normuradov, S. S. Nasriddinov

    МақолаSemiconductor materials and interfaces19990 иқтибос
    ABI

  9. Thermo-sensitive structures formed in silicon by ion implantation

    А.С. Рысбаев, M.T. Normuradov, I.P. Parmankulov +1

    МақолаSilicon and Solar Cell Technologies19990 иқтибос
    ABI

  10. Influence of ion implantation and annealing on composition and structure of GaAs surface

    M.T. Normuradov

    МақолаIon-surface interactions and analysisSemiconductor Physics Quantum Electronics & Optoelectronics20020 иқтибос
    ABI

  11. Composition and electronic structure of hidden nanoscale phases and layers of BaSi-=SUB=-2-=/SUB=- formed in the near-surface of Si

    Б. Е. Умирзаков, M.T. Normuradov, D. A. Normurodov +1

    МақолаSemiconductor materials and interfacesФизика и техника полупроводников20220 иқтибос
    ABI