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D. A. Normurodov

5 та иш

Karshi State University, 180103, Karshi, Uzbekistan

  1. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques202117 иқтибос
    ABI

  2. Investigation of optical and electrophysical properties of Mn4Si7 coatings of different thickness

    Б.Д. Игамов, I. R. Bekpulatov, Gunel Imanova +2

    МақолаSemiconductor materials and interfacesPhysics and Chemistry of Solid State20245 иқтибос
    ABI

  3. On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing

    А.С. Рысбаев, M. T. Normurodov, J. B. Khujaniyozov +2

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20211 иқтибос
    ABI

  4. Composition and electronic structure of hidden nanoscale phases and layers of BaSi-=SUB=-2-=/SUB=- formed in the near-surface of Si

    Б. Е. Умирзаков, M.T. Normuradov, D. A. Normurodov +1

    МақолаSemiconductor materials and interfacesФизика и техника полупроводников20220 иқтибос
    ABI

  5. Photoinduced Absorption Spectrum of GeSi/Si Quantum Dots in the Mid-IR and Terahertz Ranges under Resonant and Non-resonant Optical Pumping

    Danila Kararulov, Ratmir V. Ustimenko, G A Melentev +6

    МақолаPhotonic and Optical Devices20240 иқтибос
    ABI