Gunel Imanova
40 та иш
Institute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku AZ 1143, Azerbaijan
Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions
Б. Е. Умирзаков, I. R. Bekpulatov, Gunel Imanova +2
МақолаIon-surface interactions and analysisEurasian journal of physics and functional materials20232 иқтибосABIInvestigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si
Gunel Imanova, I. R. Bekpulatov
МақолаSemiconductor materials and interfacesAmerican Journal of Nano Research and Applications20211 иқтибосABI