Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films
M. T. NormurodovKarshi State University, 180103, Karshi, UzbekistanА.С. РысбаевTashkent State Technical University named after I.A. Karimov, 100095, Tashkent, UzbekistanI. R. BekpulatovTashkent State Technical University named after I.A. Karimov, 100095, Tashkent, UzbekistanD. A. NormurodovKarshi State University, 180103, Karshi, UzbekistanZ. A. TursunmetovaResearch Institute of Semiconductor Physics and Microelectronics at the National University named after Mirzo Ulugbek, 100057, Tashkent, Uzbekistan
ABI
Аннотация
The formation of films of barium monosilicide BaSi and dicilicide BaSi2 on an n-Si(100) substrate of different thicknesses d = 8–800 nm during the low-energy high-dose implantation of barium ions in Si(100) and magnetron sputtering of bulk samples of barium silicides is studied by electron spectroscopy and low-energy electron diffraction. The optimal modes of the formation and band-energy parameters of BaSi and BaSi2 films on n-Si(100) are determined.
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