Ушбу иш иқтибос қилган ишлар

12 та иш

Иш: Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

1. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

   А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

   МақолаSemiconductor materials and interfacesTechnical Physics201415 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.213638

2. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

   S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

   МақолаIon-surface interactions and analysisTechnical Physics201513 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.095299

3. Electron microscopy characterization of higher manganese silicide film structure on silicon

   Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

   МақолаSemiconductor materials and interfacesNanotechnologies in Russia20167 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.079735

4. Surface Science

   Kenjiro Oura, Michiko Katayama, А. В. Зотов +2

   Китоб20035 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.144464

5. Implantation of sodium ions into germanium

   V.M. Korol, Yu. Kudriavtsev

   Мақола20123 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.213637

6. Keimbildung in übersättigten Gebilden

   Marcel Volmer, Adam Weber

   Мақола19262 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.213639

7. Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing

   А.С. Рысбаев, I. R. Bekpulatov, Б.Д. Игамов +1

   МақолаSemiconductor materials and interfacesEurasian journal of physics and functional materials20192 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.213640

8. Obtaining nanoscale CoSiO/Si/CoSi₂ systems for increasing the range of light ray absorption energy

   S. B. Donaev, Б. Е. Умирзаков, D U Sobirova +2

   МақолаSilicon Nanostructures and PhotoluminescenceIOP Conference Series Earth and Environmental Science20202 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.213642

9. Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

   M.T. Normuradov, A. S. Risbaev, J. B. Khujaniyozov +1

   МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20202 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.213643

10. Сарлавҳасиз

    Бошқа1 иқтибос

    ABIABI:AkademIndex/openalex/2026.other.213636

11. Сарлавҳасиз

    Бошқа1 иқтибос

    ABIABI:AkademIndex/openalex/2026.other.213641

12. Сарлавҳасиз

    Бошқа1 иқтибос

    ABIABI:AkademIndex/openalex/2026.other.213644