Anton S. Orekhov

3 та иш

National Research Center “Kurchatov Institute,”, pl. Akademika Kurchatova 1, Moscow, 123182, Russia

1. Electron microscopy characterization of higher manganese silicide film structure on silicon

   Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

   МақолаSemiconductor materials and interfacesNanotechnologies in Russia20167 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.079735

2. Study of peculiarities of heat generation at the Mn 4 Si 7 -Si heterostructure interface

   D.M. Shukurova, T. S. Kamilov, B. Z. Sharipov +2

   МақолаSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20100 иқтибос

   ABIABI:AkademIndex/openalex/2010.article.000566

3. Selecting a target for obtaining films of higher manganese silicide using magnetron sputtering

   М. S. Lukasov, Н. А. Архарова, Anton S. Orekhov +2

   МақолаSemiconductor materials and interfacesКристаллография20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.008195