Selecting a target for obtaining films of higher manganese silicide using magnetron sputtering
М. S. LukasovShubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC "Kurchatov Institute"Н. А. АрхароваShubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC "Kurchatov Institute"Anton S. OrekhovShubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC "Kurchatov Institute"T. S. KamilovTashkent State Technical University named after Islam KarimovV. V. KlechkovskayaShubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC "Kurchatov Institute"
ABI
Аннотация
A film of manganese silicides on mica was obtained using a magnetron sputter from three types of targets. Microstructure and elemental composition of targets and films studied by scanning electron microscopy and electron reflection diffraction methods. The phase composition and texture of films by thickness (cross sections) were controlled by scanning and transmission electron microscopy. It has been shown that when depositing films from a poly- and single-crystalline target of higher manganese silicide, in contrast to a target of sintered Mn and Si powders, after successive annealing at a temperature of 800 K and a temperature of 10–3 Pa for 1 hour, polycrystalline films of higher silicide can be obtained. manganese composition Mn4Si7.
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