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Иш: Selecting a target for obtaining films of higher manganese silicide using magnetron sputtering

The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures
T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3
МақолаSemiconductor materials and interfacesApplied Solar Energy201921 иқтибос
ABI
Obtaining higher manganese silicide films with high thermoelectric properties
I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1
МақолаSemiconductor materials and interfacesE3S Web of Conferences20239 иқтибос
ABI
Composites of Higher Manganese Silicides and Nanostructured Secondary Phases and Their Thermoelectric Properties
Aijun Zhou, Xingang Zhao, Tiejun Zhu +4
Мақола20092 иқтибос
ABI
Synthesis of Thermoelectric Manganese Silicide by Mechanical Alloying and Pulse Discharge Sintering
Takashi Itoh, Masataka Yamada
Мақола20092 иқтибос
ABI
Thermoelectric Properties of Cold-Pressed Higher Manganese Silicides for Waste Heat Recovery
Xi Chen, Annie Weathers, Arden L. Moore +2
Мақола20122 иқтибос
ABI
Directional thermoelectric properties of Ru2Si3
B.A. Simkin, Yoshinori Hayashi, H. Inui
Мақола20052 иқтибос
ABI
Surfactant mediated growth of MnSi1.7 layers on (001)Si
Anna Mogilatenko, M. Falke, S. Teichert +3
Мақола20022 иқтибос
ABI
Структура термоэлектрических пленок высшего силицида марганца на кремнии по данными электронной микроскопии
Anton S. Orekhov, Т.С. Камилов, Б.В. Ибрагимова +2
Мақола20172 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI