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V. V. Klechkovskaya

19 та иш

Shubnikov Institute of Crystallography, Crystallography and Photonics Federal Research Center, Russian Academy of Sciences, 119333, Moscow, Russia

  1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    МақолаSemiconductor materials and interfacesApplied Solar Energy201921 иқтибос
    ABI

  2. Electron microscopy characterization of higher manganese silicide film structure on silicon

    Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

    МақолаSemiconductor materials and interfacesNanotechnologies in Russia20167 иқтибос
    ABI

  3. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    МақолаSemiconductor materials and interfacesSemiconductors20175 иқтибос
    ABI

  4. Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes

    Д. М. Шукурова, Andrey Orekhov, B. Z. Sharipov +2

    МақолаSemiconductor materials and interfacesTechnical Physics20114 иқтибос
    ABI

  5. Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    МақолаSemiconductor materials and interfacesEurasian journal of physics and functional materials20183 иқтибос
    ABI

  6. About the mechanism of formation and growth of the higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

    МақолаSemiconductor materials and interfaces20053 иқтибос
    ABI

  7. Formation of higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    МақолаSemiconductor materials and interfacesTechnical Physics20052 иқтибос
    ABI

  8. On the growth of higher manganese silicide films on silicon

    Andrey Orekhov, T. S. Kamilov, Abdumalik Gaibov +2

    МақолаSemiconductor materials and interfacesTechnical Physics20102 иқтибос
    ABI

  9. Analysis of the induced photothermal conduction in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    МақолаSemiconductor materials and interfacesTechnical Physics20132 иқтибос
    ABI

  10. Development of thermoelectric detectors on the basis of higher manganese silicide (HMS) films

    T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +5

    МақолаAdvanced Thermoelectric Materials and Devices20041 иқтибос
    ABI

  11. Growth technique and structural properties of the higher manganese silicide films

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    МақолаSemiconductor materials and interfaces20051 иқтибос
    ABI

  12. Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    МақолаSemiconductor materials and interfacesTechnical Physics20131 иқтибос
    ABI

  13. Investigation of the Magnesium Silicide -- Mg<sub>2</sub>Si Films

    T. S. Kamilov, D.K. Kabilov, R.Kh. Kamilova +4

    МақолаSemiconductor materials and interfaces20060 иқтибос
    ABI

  14. About the Interface Between the Higher Manganese Silicide Film and Si (111)

    T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5

    МақолаSemiconductor materials and interfaces20060 иқтибос
    ABI

  15. Development the obtaining technology of highest manganese silicide films for thermoelectric microelectric devices

    B. Z. Sharipov, Д. М. Шукурова, M.E. Azimov +3

    МақолаSemiconductor materials and interfaces20100 иқтибос
    ABI

  16. Study of peculiarities of heat generation at the Mn 4 Si 7 -Si heterostructure interface

    D.M. Shukurova, T. S. Kamilov, B. Z. Sharipov +2

    МақолаSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20100 иқтибос
    ABI

  17. The mechanism of photocurrent saturation and appearance of negative differential photoconductivity in heterostructures Mn 4 Si 7 -Si 4 Si 7 and Mn 4 Si 7 -Si<Mn≥-M

    T. S. Kamilov, B. Z. Sharipov, V. V. Klechkovskaya +1

    МақолаSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20110 иқтибос
    ABI

  18. Selecting a Target for Obtaining Films of Higher Manganese Silicide Using Magnetron Sputtering

    М. S. Lukasov, Н. А. Архарова, Andrey Orekhov +2

    МақолаSemiconductor materials and interfacesCrystallography Reports20240 иқтибос
    ABI

  19. Selecting a target for obtaining films of higher manganese silicide using magnetron sputtering

    М. S. Lukasov, Н. А. Архарова, Anton S. Orekhov +2

    МақолаSemiconductor materials and interfacesКристаллография20240 иқтибос
    ABI