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М. S. Lukasov

4 та иш

Shubnikov Institute of Crystallography, Kurchatov Complex of Crystallography and Photonics, National Research Center “Kurchatov Institute”, 119333, Moscow, Russia

  1. Selecting a Target for Obtaining Films of Higher Manganese Silicide Using Magnetron Sputtering

    М. S. Lukasov, Н. А. Архарова, Andrey Orekhov +2

    МақолаSemiconductor materials and interfacesCrystallography Reports20240 иқтибос
    ABI

  2. Selecting a target for obtaining films of higher manganese silicide using magnetron sputtering

    М. S. Lukasov, Н. А. Архарова, Anton S. Orekhov +2

    МақолаSemiconductor materials and interfacesКристаллография20240 иқтибос
    ABI

  3. Structure and Thermoelectric Properties of β-FeSi2 Doped with Cobalt

    F. Yu. Solomkin, Н. В. Шаренкова, Г. Н. Исаченко +5

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 иқтибос
    ABI

  4. Structure and thermoelectric properties of β-FeSi<sub>2</sub> doped with cobalt

    F. Yu. Solomkin, Н. В. Шаренкова, Г. Н. Исаченко +5

    МақолаSemiconductor materials and interfacesПоверхность Рентгеновские синхротронные и нейтронные исследования20240 иқтибос
    ABI