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Semiconductors

118 та иш

Журнал · ISSN 1063-7826

  1. Injection photodiode based on an n-CdS/p-CdTe heterostructure

    Ш. А. Мирсагатов, R. R. Kabulov, M. A. Makhmudov

    МақолаChalcogenide Semiconductor Thin FilmsSemiconductors201319 иқтибос
    ABI

  2. Negative magnetoresistance in silicon with manganese-atom complexes [Mn]4

    M. K. Bakhadirkhanov, K. S. Ayupov, G. H. Mavlyanov +1

    МақолаMagneto-Optical Properties and ApplicationsSemiconductors201018 иқтибос
    ABI

  3. Effect of temperature on the thermodynamic density of states in a quantizing magnetic field

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev

    МақолаQuantum and electron transport phenomenaSemiconductors201416 иқтибос
    ABI

  4. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    МақолаMaterial Science and ThermodynamicsSemiconductors200913 иқтибос
    ABI

  5. Determination of the density of surface states at the semiconductor-insulator interface in a metal-insulator-semiconductor structure

    G. Gulyamov, N. Yu. Sharibaev

    МақолаSurface and Thin Film PhenomenaSemiconductors201110 иқтибос
    ABI

  6. On the tensosensitivity of a p-n junction under illumination

    G. Gulyamov, A. G. Gulyamov

    МақолаOptical Polarization and EllipsometrySemiconductors201510 иқтибос
    ABI

  7. Spectra of low-temperature photoluminescence in thin polycrystalline CdTe films

    Б. З. Полвонов, N. Kh. Yuldashev

    МақолаAdvanced Semiconductor Detectors and MaterialsSemiconductors20169 иқтибос
    ABI

  8. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20109 иқтибос
    ABI

  9. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    МақолаChalcogenide Semiconductor Thin FilmsSemiconductors20108 иқтибос
    ABI

  10. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    МақолаSemiconductor materials and interfacesSemiconductors20218 иқтибос
    ABI

  11. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

    Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

    МақолаSemiconductor materials and interfacesSemiconductors20228 иқтибос
    ABI

  12. Adsorption of alkali metals and their effect on electronic properties of grain boundaries in bulk of polycrystalline silicon

    L. O. Olimov

    МақолаThin-Film Transistor TechnologiesSemiconductors20108 иқтибос
    ABI

  13. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

    МақолаSemiconductor materials and interfacesSemiconductors20098 иқтибос
    ABI

  14. EMF Induced in a p–n Junction under a Strong Microwave Field and Light

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev +1

    МақолаMechanical and Optical ResonatorsSemiconductors20197 иқтибос
    ABI

  15. Effect of alkali metals on the electronic properties of grain boundaries on a polycrystalline silicon surface

    L. O. Olimov

    МақолаSilicon and Solar Cell TechnologiesSemiconductors20127 иқтибос
    ABI

  16. Specific features of magnetoresistance in overcompensated manganese-doped silicon

    M. K. Bakhadirkhanov, G. H. Mavlonov, X. M. Iliev +3

    МақолаMagnetic Properties and ApplicationsSemiconductors20147 иқтибос
    ABI

  17. Two- and Three-Photon Linear-Circular Dichroism in Cubic-Symmetry Semiconductors

    Rustam Yavkachovich Rasulov, Ravshan Rustamovich Sultonov, Bahodir Bahromovich Akhmedov

    МақолаNonlinear Optical Materials StudiesSemiconductors20206 иқтибос
    ABI

  18. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    МақолаSemiconductor materials and interfacesSemiconductors20175 иқтибос
    ABI

  19. Kinetics of attaining the steady state of hot carrier thermoelectric power in a p-n junction with consideration for lattice heating

    G. Gulyamov, М. Г. Дадамирзаев, S. R. Boĭdedaev

    МақолаAdvanced Thermoelectric Materials and DevicesSemiconductors20005 иқтибос
    ABI

  20. Hot carrier electromotive force caused by surface potential modulation in a strong microwave field

    G. Gulyamov, М. Г. Дадамирзаев, S. R. Boĭdedaev

    МақолаElectromagnetic Effects on MaterialsSemiconductors20005 иқтибос
    ABI

  21. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, А. С. Саидов, A. Yu. Leĭderman +4

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20165 иқтибос
    ABI

  22. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    МақолаSilicon and Solar Cell TechnologiesSemiconductors20095 иқтибос
    ABI

  23. Eddy currents appearing in a p-n junction in a high microwave field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    МақолаElectromagnetic Effects on MaterialsSemiconductors20115 иқтибос
    ABI

  24. Linear photovoltaic effect in gyrotropic crystals

    Rustam Yavkachovich Rasulov, Yu. E. Salenko, D. Kambarov

    МақолаSolid-state spectroscopy and crystallographySemiconductors20024 иқтибос
    ABI

  25. Correlation between the material parameters and conditions for the excitation of recombination waves in Si〈;S〉

    М. К. Бахадырханов, U. Kh. Kurbanova, Н. Ф. Зикриллаев

    МақолаSemiconductor materials and interfacesSemiconductors19994 иқтибос
    ABI