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М. С. Саидов

56 та иш

U. A. Arifov Institute of Electronics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

  1. Impurity thermovoltaic effect in the grain boundaries of a polycrystalline silicon solar cell

    М. С. Саидов, B. M. Abdurakhmanov, L. O. Olimov

    МақолаSemiconductor Quantum Structures and DevicesApplied Solar Energy200714 иқтибос
    ABI

  2. Impurity thermovoltaic effect of semiconductor structures: Specific features and outlook

    М. С. Саидов

    МақолаSemiconductor materials and interfacesApplied Solar Energy200712 иқтибос
    ABI

  3. Thermovoltaic properties of technical silicon melted by solar radiation

    А. С. Саидов, A. A. Abakumov, М. С. Саидов +2

    МақолаDiverse Industrial Engineering TechnologiesApplied Solar Energy200711 иқтибос
    ABI

  4. Electrophysical properties of solar polycrystalline silicon and its n +-p structures at elevated temperatures

    B. M. Abdurakhmanov, L. O. Olimov, М. С. Саидов

    МақолаThin-Film Transistor TechnologiesApplied Solar Energy200810 иқтибос
    ABI

  5. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20109 иқтибос
    ABI

  6. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4

    МақолаChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 иқтибос
    ABI

  7. Solar thermocell with low-bandgap photoheated layers

    М. С. Саидов

    МақолаThermal Radiation and Cooling TechnologiesApplied Solar Energy20127 иқтибос
    ABI

  8. Classification of impurity voltaic effects in semiconductors and impurity voltaics

    М. С. Саидов

    МақолаSemiconductor Quantum Structures and DevicesApplied Solar Energy20086 иқтибос
    ABI

  9. Impurity thermovoltaic effect in the grain boundaries of a polycrystalline silicon solar cell

    М. С. Саидов, B. M. Abdurakhmanov, L. O. Olimov

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20075 иқтибос
    ABI

  10. Impurity voltaic effects and thermophotovoltaics

    М. С. Саидов

    МақолаThermal Radiation and Cooling TechnologiesApplied Solar Energy20084 иқтибос
    ABI

  11. Photothermoelectric cell for thermophotovoltaic systems and solar power plants with concentrators

    М. С. Саидов

    МақолаThermal Radiation and Cooling TechnologiesApplied Solar Energy20124 иқтибос
    ABI

  12. Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

    А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

    МақолаSemiconductor materials and interfacesApplied Solar Energy20174 иқтибос
    ABI

  13. Semiconductor voltaics: Problems and prospects

    М. С. Саидов

    МақолаAdvanced Semiconductor Detectors and MaterialsApplied Solar Energy20124 иқтибос
    ABI

  14. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

    А. С. Саидов, Sh. N. Usmonov, М. С. Саидов

    МақолаSilicon Nanostructures and PhotoluminescenceSemiconductors20153 иқтибос
    ABI

  15. Thermovoltaic effect of pSi-n(Si2)1−x(ZnS)x structures

    М. С. Саидов, А. С. Саидов, Sh. N. Usmonov +1

    МақолаSemiconductor materials and interfacesApplied Solar Energy20092 иқтибос
    ABI

  16. Seismic Deformations in the Archeological Monuments of Mugkala and Mugtepa (Fergana Depression, Uzbekistan)

    А. М. Корженков, M. T. Usmanova, A. A. Anarbaev +3

    МақолаSoil and Environmental StudiesSeismic Instruments20202 иқтибос
    ABI

  17. Heat-voltaic effect of pSi-n(ZnSe)1 − x − y (Si2) x (GaP) y structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    МақолаSemiconductor materials and interfacesApplied Solar Energy20102 иқтибос
    ABI

  18. Impurity thermovoltaic effect of semiconductor structures: Specific features and outlook

    М. С. Саидов

    МақолаSemiconductor materials and interfacesApplied Solar Energy20072 иқтибос
    ABI

  19. Low-temperature crystallization of semiconductor solid solutions that are promising for the realization of the extrinsic thermophotovoltaic effect

    М. С. Саидов

    МақолаAdvanced Semiconductor Detectors and MaterialsApplied Solar Energy20072 иқтибос
    ABI

  20. Is it possible to carry out impact ionization in the narrow energy gap of p-p, n-n heterojunctions and increase the efficiency of thin-film solar cells?

    М. С. Саидов

    МақолаChalcogenide Semiconductor Thin FilmsApplied Solar Energy20112 иқтибос
    ABI

  21. Impurity thermophotovoltaic effect of the grain boundaries of technical-grade silicon

    М. С. Саидов, А. С. Саидов, Sh. N. Usmonov

    МақолаThermal Radiation and Cooling TechnologiesApplied Solar Energy20082 иқтибос
    ABI

  22. Possibility of forming continuous solid solutions of silicon and germanium with compounds with defective diamond-like structures

    М. С. Саидов

    МақолаIon-surface interactions and analysisApplied Solar Energy20082 иқтибос
    ABI

  23. Ion bombardment effect on Si homoepitaxial growth from ion molecular beams

    T.S. Pugacheva, М. С. Саидов, A. S. Lutovich

    МақолаIon-surface interactions and analysisRadiation Effects19871 иқтибос
    ABI

  24. Preparation and Thermoelectric Properties of Polycrystalline Si0.4Ge0.6

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

    МақолаSemiconductor materials and interfacesInorganic Materials20051 иқтибос
    ABI

  25. Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons

    М. С. Саидов, S. L. Lutpullaev, А. Yusupov +5

    МақолаSilicon and Solar Cell TechnologiesPhysics of the Solid State20071 иқтибос
    ABI