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А. С. Саидов

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Laboratory “Growth of semiconductor materials”, Physical–Technical Institute of Uzbek Academy of Science, Mavlanov str. 2 B, Tashkent, 700084, Uzbekistan

  1. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

    А. С. Саидов, A. Sh. Razzakov, V.A. Risaeva +1

    МақолаChalcogenide Semiconductor Thin FilmsMaterials Chemistry and Physics200125 иқтибос
    ABI

  2. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    МақолаMaterial Science and ThermodynamicsSemiconductors200913 иқтибос
    ABI

  3. Thermovoltaic properties of technical silicon melted by solar radiation

    А. С. Саидов, A. A. Abakumov, М. С. Саидов +2

    МақолаDiverse Industrial Engineering TechnologiesApplied Solar Energy200711 иқтибос
    ABI

  4. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +5

    МақолаSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics20219 иқтибос
    ABI

  5. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20109 иқтибос
    ABI

  6. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +2

    МақолаAdvanced Surface Polishing TechniquesPhysics of the Solid State20138 иқтибос
    ABI

  7. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

    А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

    МақолаPhase-change materials and chalcogenidesApplied Solar Energy20198 иқтибос
    ABI

  8. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

    А. С. Саидов, Sh. N. Usmonov, D. V. Saparov

    МақолаQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering20198 иқтибос
    ABI

  9. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4

    МақолаChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 иқтибос
    ABI

  10. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

    МақолаSemiconductor materials and interfacesSemiconductors20098 иқтибос
    ABI

  11. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leĭderman

    МақолаNear-Field Optical MicroscopyPhysics of the Solid State20147 иқтибос
    ABI

  12. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +2

    МақолаChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B20226 иқтибос
    ABI

  13. Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells

    А. С. Саидов, K. A. Amonov, B. R. Kutlimurotov

    МақолаSemiconductor materials and interfacesApplied Solar Energy20166 иқтибос
    ABI

  14. Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots

    А. С. Саидов, С. З. Зайнабидинов, M. U. Kalanov +2

    МақолаSemiconductor Quantum Structures and DevicesApplied Solar Energy20156 иқтибос
    ABI

  15. Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

    А. С. Саидов, A. Sh. Razzokov

    МақолаSemiconductor materials and interfacesCrystallography Reports20225 иқтибос
    ABI

  16. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, А. С. Саидов, A. Yu. Leĭderman +4

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20165 иқтибос
    ABI

  17. The thermovoltaic effect in variband solid solution Si1–x Ge x (0 ≤ x ≤ 1)

    А. С. Саидов, A. Yu. Leyderman, A. B. Karshiev

    МақолаMaterial Science and ThermodynamicsTechnical Physics Letters20164 иқтибос
    ABI

  18. Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

    С. З. Зайнабидинов, А. С. Саидов, Akramjon Y. Boboev +1

    МақолаSemiconductor Quantum Structures and DevicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20214 иқтибос
    ABI

  19. Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

    А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

    МақолаSemiconductor materials and interfacesApplied Solar Energy20174 иқтибос
    ABI

  20. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    МақолаSemiconductor materials and interfacesSemiconductors20184 иқтибос
    ABI

  21. RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE

    А. С. Саидов, K. A. Amonov, Ada Yul'evna Leyderman

    МақолаSemiconductor materials and interfacesComputational nanotechnology20194 иқтибос
    ABI

  22. About Possibility of Development Synergetic Processes in Semiconductors of Type AIIIBV

    Ada Leyderman, А. С. Саидов, Muslim Khashaev +1

    МақолаAdvanced Semiconductor Detectors and MaterialsJournal of Materials Science Research20134 иқтибос
    ABI

  23. Study of properties of tellurium-doped indium phosphide as photoconversion material

    A. Yu. Leĭderman, А. С. Саидов, M. M. Khashaev +1

    МақолаPhase-change materials and chalcogenidesApplied Solar Energy20144 иқтибос
    ABI

  24. The thermoelectric effect in a graded-gap nSi–pSi1–x Ge x heterostructure

    A. Yu. Leĭderman, А. С. Саидов, A. B. Karshiev

    МақолаMaterial Science and ThermodynamicsApplied Solar Energy20164 иқтибос
    ABI

  25. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

    А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

    МақолаPhotonic and Optical DevicesSemiconductors20124 иқтибос
    ABI