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A. Sh. Razzakov

11 та иш

Laboratory “Growth of semiconductor materials”, Physical–Technical Institute of Uzbek Academy of Science, Mavlanov str. 2 B, Tashkent, 700084, Uzbekistan

  1. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

    А. С. Саидов, A. Sh. Razzakov, V.A. Risaeva +1

    МақолаChalcogenide Semiconductor Thin FilmsMaterials Chemistry and Physics200125 иқтибос
    ABI

  2. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +5

    МақолаSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics20219 иқтибос
    ABI

  3. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +2

    МақолаChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B20226 иқтибос
    ABI

  4. Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers

    А. С. Саидов, A. Sh. Razzakov, D. V. Saparov

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20022 иқтибос
    ABI

  5. The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x(ZnSe)x

    А. С. Саидов, É. A. Koshchanov, A. Sh. Razzakov

    МақолаPhase-change materials and chalcogenidesTechnical Physics Letters19982 иқтибос
    ABI

  6. Liquid phase epitaxy of (GaAs)1−x(ZnSe)x solid solution layers from a lead-based solution melt

    А. С. Саидов, A. Sh. Razzakov, Kurban Gaimnazarov

    МақолаChalcogenide Semiconductor Thin FilmsTechnical Physics Letters20012 иқтибос
    ABI

  7. Liquid phase epitaxy of Ge1−xSnx semiconductor films

    А. С. Саидов, A. Sh. Razzakov, É. A. Koshchanov

    МақолаPhotonic and Optical DevicesTechnical Physics Letters20012 иқтибос
    ABI

  8. Growth of perfect-crystal Si-Si1−xGex-(Ge2)1−x(InP)x structures from the liquid phase

    А. С. Саидов, É. A. Koshchanov, A. Sh. Razzakov +1

    МақолаSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19990 иқтибос
    ABI

  9. Growth of Ge1−xSnnx solid solutions from the liquid phase

    A. Sh. Razzakov

    МақолаPhotonic and Optical DevicesDoklady Physics20010 иқтибос
    ABI

  10. Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase

    A. Sh. Razzakov, A. Matnazarov, Mutabar Latipova +1

    МақолаSilicon Nanostructures and PhotoluminescenceBulletin of Science and Practice20200 иқтибос
    ABI

  11. Getting Variable-gap Solid Solution Si1−xGex From a Liquid Phase

    A. Sh. Razzakov, A. Latipova, Alibek Qodirov

    МақолаSemiconductor Quantum Structures and DevicesBulletin of Science and Practice20210 иқтибос
    ABI