The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x(ZnSe)x
А. С. СаидовPhysics-Sun Physicotechnical Institute Scientific Manufacturing Organization, Academy of Sciences of the Republic of Uzbekistan, TashkentÉ. A. KoshchanovPhysics-Sun Physicotechnical Institute Scientific Manufacturing Organization, Academy of Sciences of the Republic of Uzbekistan, TashkentA. Sh. RazzakovPhysics-Sun Physicotechnical Institute Scientific Manufacturing Organization, Academy of Sciences of the Republic of Uzbekistan, Tashkent
ABI
Аннотация
Based on morphological investigations, as well as on a study of the scanning patterns and diffraction spectra of the heterostructures GaAs-(Ge2)1−x (ZnSe)x, Ge-(Ge2)1−x (ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x (ZnSe)x, it is shown that the crystal perfection of these structures depends on the choice of the conditions of liquid-phase epitaxy. It is shown that mirror-smooth epitaxial layers of (Ge 2)1−x (ZnSe)x with the lowest stress levels can be obtained on GaAs (100) and Ge (111) substrates.
Ҳали таржима қилинмаган
Мавзулар
Идентификаторлар
Иқтибослар ва манбалар
2 та иқтибос0 та фойдаланилган манба