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Technical Physics Letters

356 та иш

Журнал · ISSN 1063-7850

  1. Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep p–n-Junction

    М. К. Бахадырханов, С. Б. Исамов, Z. T. Kenzhaev +1

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters201912 иқтибос
    ABI

  2. Thermal spikes observed during the tantalum sputtering by gold cluster ions

    С. Н. Морозов, У. Х. Расулев

    МақолаIon-surface interactions and analysisTechnical Physics Letters200312 иқтибос
    ABI

  3. Injection photodiode based on p-CdTe film

    Ш. А. Мирсагатов, A.K. Uteniyazov

    МақолаAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters201211 иқтибос
    ABI

  4. Features of the behavior of lanthanum and hafnium atoms in silicon

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20069 иқтибос
    ABI

  5. Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon

    М. К. Бахадырханов, K. S. Ayupov, Х. М. Илиев +2

    МақолаMagnetic properties of thin filmsTechnical Physics Letters20108 иқтибос
    ABI

  6. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    МақолаSemiconductor materials and devicesTechnical Physics Letters20186 иқтибос
    ABI

  7. Developing Si(Li) nuclear radiation detectors by pulsed electric field treatment

    Р. А. Муминов, S. A. Radzhapov, А. К. Саймбетов

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20096 иқтибос
    ABI

  8. The Effect of the Formation of Silicides on the Resistivity of Silicon

    Б. Е. Умирзаков, Д. А. Ташмухамедова, G. Kh. Allayarova +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20195 иқтибос
    ABI

  9. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 иқтибос
    ABI

  10. Adsorption of Ba Atoms Influences the Composition, Emission, and Optical Properties of CdS Single Crystals

    Б. Е. Умирзаков, J. Sh. Sodiljanov, Д. А. Ташмухамедова +2

    МақолаQuantum Dots Synthesis And PropertiesTechnical Physics Letters20215 иқтибос
    ABI

  11. Variation of the reflection coefficient of semiconductors in a wavelength range from 0.2 to 20 μm under the action of ultrasonic waves

    B. N. Zaveryukhin, N. N. Zaveryukhina, Oybek Tursunkulov

    МақолаMaterial Properties and ApplicationsTechnical Physics Letters20025 иқтибос
    ABI

  12. Electron Microscopy and Elemental Composition of the Near-Surface Layer of Electron-Irradiated LiF Crystals

    M. A. Mussaeva, Э. М. Ибрагимова

    МақолаIon-surface interactions and analysisTechnical Physics Letters20195 иқтибос
    ABI

  13. Features of the photoconductivity of iodine-doped cotton fibers illuminated in the fundamental absorption range

    A. T. Mamadalimov, B. L. Oksegendler, Sh.O. Otazhonov +4

    МақолаDyeing and Modifying Textile FibersTechnical Physics Letters20024 иқтибос
    ABI

  14. The thermovoltaic effect in variband solid solution Si1–x Ge x (0 ≤ x ≤ 1)

    А. С. Саидов, A. Yu. Leyderman, A. B. Karshiev

    МақолаMaterial Science and ThermodynamicsTechnical Physics Letters20164 иқтибос
    ABI

  15. Crystal Structure and Band Gap of Nanoscale Phases of Si Formed at Various Depths of the Near-Surface Region of SiO2

    Д. А. Ташмухамедова, M. B. Yusupjanova, G. Kh. Allayarova +1

    МақолаSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20204 иқтибос
    ABI

  16. Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface

    S. B. Donaev

    МақолаSemiconductor materials and devicesTechnical Physics Letters20204 иқтибос
    ABI

  17. Effective antireflection coating based on TiO2-SiO2 mixture for solar cells

    С. Х. Сулейманов, В. Г. Дыскин, M. U. Dzhanklych +1

    МақолаDiamond and Carbon-based Materials ResearchTechnical Physics Letters20133 иқтибос
    ABI

  18. Increasing the Efficiency of Organic Solar Cells by Antireflection Coatings Based on Fluoride Composites

    С. Х. Сулейманов, Paul R. Berger, В. Г. Дыскин +3

    МақолаOrganic Electronics and PhotovoltaicsTechnical Physics Letters20183 иқтибос
    ABI

  19. Thermodesorption Spectrometer of Hard-Volatile Active Organic Compounds

    S. S. Iskhakova, У. Хасанов, У. Х. Расулев +1

    МақолаAdvanced Chemical Sensor TechnologiesTechnical Physics Letters20203 иқтибос
    ABI

  20. Waveguide Logic Gates for Magnetooptical Qubits

    Shukhrat Egamov, Abduvali Khidirov, Kh O Urinov +1

    МақолаQuantum optics and atomic interactionsTechnical Physics Letters20203 иқтибос
    ABI

  21. The synthesis and photoelectric properties of Si-(Si2)1−x(ZnS)x epitaxial structures

    Б. Сапаев, А. С. Саидов

    МақолаSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20043 иқтибос
    ABI

  22. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20073 иқтибос
    ABI

  23. Antireflection coatings based on fluoride formulations for organic solar cells

    С. Х. Сулейманов, Paul R. Berger, В. Г. Дыскин +5

    МақолаOrganic Electronics and PhotovoltaicsTechnical Physics Letters20163 иқтибос
    ABI

  24. Structure and photoelectric properties of Si1 − x Sn x epilayers

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20103 иқтибос
    ABI

  25. Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20073 иқтибос
    ABI