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Advancements in Semiconductor Devices and Circuit Design

147 та иш

  1. Transport properties of silicon doped with manganese via low-temperature diffusion

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    МақолаSilicon and Solar Cell TechnologiesInorganic Materials201124 иқтибос
    ABI

  2. Modeling on the temperature dependence of the magnetic susceptibility and electrical conductivity oscillations in narrow-gap semiconductors

    U. I. Erkaboev, G. Gulyamov, J. I. Mirzaev +1

    МақолаQuantum and electron transport phenomenaInternational Journal of Modern Physics B202020 иқтибос
    ABI

  3. A new method for determining the bandgap in semiconductors in presence of external action taking into account lattice vibrations

    U. I. Erkaboev, G. Gulyamov, R. G. Rakhimov

    МақолаSemiconductor Quantum Structures and DevicesIndian Journal of Physics202114 иқтибос
    ABI

  4. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 иқтибос
    ABI

  5. Simulation of temperature dependence of oscillations of longitudinal magnetoresistance in nanoelectronic semiconductor materials

    Ulugbek Erkaboev, R. G. Rakhimov

    МақолаSemiconductor Quantum Structures and Devicese-Prime - Advances in Electrical Engineering Electronics and Energy202311 иқтибос
    ABI

  6. Energy Levels in Nanowires and Nanorods with a Finite Potential Well

    G. Gulyamov, A. G. Gulyamov, A. B. Davlatov +1

    МақолаSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics202011 иқтибос
    ABI

  7. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаSemiconductor materials and interfacesEast European Journal of Physics202410 иқтибос
    ABI

  8. Galvano- and thermo-magnetic effects at low and high temperatures within non-Markovian quantum Langevin approach

    I. B. Abdurakhmanov, G. G. Adamian, N. V. Antonenko +1

    МақолаQuantum and electron transport phenomenaPhysica A Statistical Mechanics and its Applications201810 иқтибос
    ABI

  9. Investigation of Defect InP(001) Surface by Low Energy Ion Scаttering Spectroscopy

    М. K. Kаrimov, F.O. Kuryozov, Sh.R. Sadullaev +2

    МақолаIntegrated Circuits and Semiconductor Failure AnalysisMaterials science forum20228 иқтибос
    ABI

  10. Exclusion Effect in Semiconductors with Non-Injecting Contacts

    D. A. Aronov, P. I. Knigin, Yu. S. Korolev +1

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19847 иқтибос
    ABI

  11. Subbarrier and Overbarrier Electron Transfer through Multilayer Semiconductor Structures

    Rustam Yavkachovich Rasulov, N. Z. Mamadalieva, R. R. Sultanov

    МақолаSemiconductor materials and interfacesRussian Physics Journal20207 иқтибос
    ABI

  12. A Surface Study of Si Doped Simultaneously with Ga and Sb

    X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

    МақолаSemiconductor Quantum Structures and DevicesEast European Journal of Physics20237 иқтибос
    ABI

  13. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 иқтибос
    ABI

  14. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 иқтибос
    ABI

  15. Effect of alkali metals on the electronic properties of grain boundaries on a polycrystalline silicon surface

    L. O. Olimov

    МақолаSilicon and Solar Cell TechnologiesSemiconductors20127 иқтибос
    ABI

  16. Concentration, thermodynamic density of states, and entropy of electrons in semiconductor nanowires

    G. Gulyamov, A. B. Davlatov, Kh. N. Juraev

    МақолаOptical properties and cooling technologies in crystalline materialsLow Temperature Physics20227 иқтибос
    ABI

  17. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    ПрепринтAdvancements in Semiconductor Devices and Circuit Design20216 иқтибос
    ABI

  18. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    МақолаSemiconductor materials and devicesTechnical Physics Letters20186 иқтибос
    ABI

  19. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 иқтибос
    ABI

  20. Optimization of vertically stacked nanosheet FET immune to self-heating

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    МақолаSemiconductor materials and devicesMicro and Nanostructures20235 иқтибос
    ABI

  21. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 иқтибос
    ABI

  22. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 иқтибос
    ABI

  23. Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

    G. Gulyamov, Sharifa B. Utamuradova, Mukhamadjon G. Dadamirzaev +5

    МақолаSemiconductor Quantum Structures and DevicesEast European Journal of Physics20235 иқтибос
    ABI

  24. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    МақолаSilicon and Solar Cell TechnologiesSemiconductors20095 иқтибос
    ABI

  25. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    МақолаAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 иқтибос
    ABI