Асосий контентга ўтиш
AkademIndex

Маҳсулотлар

Ишлаб чиқувчилар учун

AkademBaseЭкотизим учун очиқ API

B. O. Isakov

10 та иш

Tashkent state technical university, Uzbekistan, Tashkent

  1. A Surface Study of Si Doped Simultaneously with Ga and Sb

    X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

    МақолаSemiconductor Quantum Structures and DevicesEast European Journal of Physics20237 иқтибос
    ABI

  2. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 иқтибос
    ABI

  3. The Mechanism of the Formation of Binary Compounds Between Zn and S Impurity Atoms in Si Crystal Lattice

    Н. Ф. Зикриллаев, Maruf K. Khakkulov, B. O. Isakov

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20232 иқтибос
    ABI

  4. New Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V

    N. F. Zikrillayev, С. Б. Исамов, B. O. Isakov +4

    МақолаSilicon Nanostructures and PhotoluminescenceJournal of Nano- and Electronic Physics20232 иқтибос
    ABI

  5. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 иқтибос
    ABI

  6. Effect of GaSb Compound on Silicon Bandgap Energy

    Х. М. Илиев, Н. Ф. Зикриллаев, K. S. Ayupov +4

    МақолаSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20241 иқтибос
    ABI

  7. The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

    Habibjon Kushiev, B. O. Isakov, U. X. Mukhammadjonov

    МақолаMaterial Properties and ApplicationsJournal of Nano- and Electronic Physics20241 иқтибос
    ABI

  8. Electrodifusion of Manganese Atoms in Silicon

    Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20241 иқтибос
    ABI

  9. Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

    B. O. Isakov, Xalmurat M. Iliyev, Zafar B. Khudoynazarov +1

    МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 иқтибос
    ABI

  10. The Influence of γ-Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Grown by the Czochralski Method

    Х. М. Илиев, К. А. Исмайлов, E. Zh. Kosbergenov +6

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20250 иқтибос
    ABI