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Surface Engineering and Applied Electrochemistry

43 та иш

Журнал · ISSN 1068-3755

  1. Photoconductivity of silicon with multicharged clusters of manganese atoms [Mn]4

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    МақолаInorganic Fluorides and Related CompoundsSurface Engineering and Applied Electrochemistry201010 иқтибос
    ABI

  2. Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, С. Б. Исамов, Н. Ф. Зикриллаев +4

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20208 иқтибос
    ABI

  3. The effect of silicon-germanium microheterojunctions on the parameters of silicon solar cells

    Б. А. Абдурахманов, Х. М. Илиев, С. А. Тачилин +2

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20107 иқтибос
    ABI

  4. Infrared quenching of photoconduction in silicon with multicharge manganese clusters

    M. K. Bachadyrchanov, С. Б. Исамов, Н. Ф. Зикриллаев +1

    МақолаSilicon Nanostructures and PhotoluminescenceSurface Engineering and Applied Electrochemistry20136 иқтибос
    ABI

  5. Implementation of the Nanostate Phenomenon in Materials Science of Functional Nanocomposites Based on Industrial Polymers

    С. В. Авдейчик, V. A. Goldade, В. А. Струк +2

    МақолаAdvanced Theoretical and Applied Studies in Material Sciences and GeometrySurface Engineering and Applied Electrochemistry20225 иқтибос
    ABI

  6. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 иқтибос
    ABI

  7. Interaction of radiation defects with nickel atom clusters in silicon

    Х. М. Илиев, Z.M. Saparniyazova, К. А. Исмайлов +2

    МақолаGraphite, nuclear technology, radiation studiesSurface Engineering and Applied Electrochemistry20115 иқтибос
    ABI

  8. Enhancing the Efficiency of Silicon Solar Cells through Nickel Doping

    Z. T. Kenzhaev, Н. Ф. Зикриллаев, K. S. Ayupov +3

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20234 иқтибос
    ABI

  9. Effect of pressure on the electric properties of passivating coatings based on lead borosilicate glasses

    С. И. Власов, Fayzulla A. Saparov

    МақолаMaterial Science and ThermodynamicsSurface Engineering and Applied Electrochemistry20114 иқтибос
    ABI

  10. Spectra of the energy levels of multicharged nanoclusters of manganese atoms in silicon

    М. К. Бахадырханов, С. Б. Исамов

    МақолаLaser-Ablation Synthesis of NanoparticlesSurface Engineering and Applied Electrochemistry20113 иқтибос
    ABI

  11. Self-Oscillatory Processes in Silicon, Problems and Prospects for Research, and Their Application in Electronics

    Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, K. S. Ayupov +2

    МақолаSemiconductor Quantum Structures and DevicesSurface Engineering and Applied Electrochemistry20243 иқтибос
    ABI

  12. Vibrations of photocurrent induced by IR light in silicon with quantum dots

    Э. У. Арзикулов, И. П. Парманкулов

    МақолаSilicon Nanostructures and PhotoluminescenceSurface Engineering and Applied Electrochemistry20082 иқтибос
    ABI

  13. Electrical discharge machining of nonconductive materials

    А. А. Зарипов, Х. Б. Ашуров

    МақолаAdvanced Machining and Optimization TechniquesSurface Engineering and Applied Electrochemistry20112 иқтибос
    ABI

  14. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 иқтибос
    ABI

  15. Codiffusion of Gallium and Phosphorus Atoms in Silicon

    Н. Ф. Зикриллаев, С. Б. Исамов, S. Koveshnikov +2

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20232 иқтибос
    ABI

  16. Effect of Manganese Atoms on the Magnetic Properties of Silicon

    O. E. Sattarov, A. Mavlyanov, A. An

    МақолаMagnetic Properties of AlloysSurface Engineering and Applied Electrochemistry20232 иқтибос
    ABI

  17. Sensitive thermosensors on the basis of highly compensated silicon

    М. К. Бахадырханов, S. A. Valiev, S. S. Nasriddinov +1

    МақолаGas Sensing Nanomaterials and SensorsSurface Engineering and Applied Electrochemistry20072 иқтибос
    ABI

  18. Elaboration of physical fundamentals of nanosized structures on the basis of S++Mn−− and Se++Mn−− molecule formation in silicon lattice

    М. К. Бахадырханов, U. X. Sodikov, Н. Ф. Зикриллаев +1

    МақолаChalcogenide Semiconductor Thin FilmsSurface Engineering and Applied Electrochemistry20071 иқтибос
    ABI

  19. Silicon with Binary GexSi1 – x Compounds

    Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20241 иқтибос
    ABI

  20. The Effect of Gamma Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Solar Cells

    Z. T. Kenzhaev, Х. М. Илиев, В. Б. Оджаев +6

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20241 иқтибос
    ABI

  21. Surface state density at the semiconductor-glass interface

    Aslan Nasirov

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20081 иқтибос
    ABI

  22. Nonmonotonous capacitance-voltage characteristics in metal-glass-semiconductor structures

    С. И. Власов, Aslan Nasirov, О. О. Маматкаримов +1

    МақолаSemiconductor materials and devicesSurface Engineering and Applied Electrochemistry20081 иқтибос
    ABI

  23. Gettering of gold by samarium and gadolinium in silicon

    D. É. Nazyrov

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20070 иқтибос
    ABI

  24. Obtaining films of CoSi2/Si (100) and the analysis of their morphology and stoichiometry through molecular-beam, solid-phase and reactive epitaxy methods

    Б. Э. Эгамбердиев, B. Ch. Holliev, A. S. Mallaev +2

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20070 иқтибос
    ABI

  25. Investigation of profiles of the distribution of ion-implanted Mn atoms using the rutherford back scattering method and the influence of thermal annealing on them

    Б. Э. Эгамбердиев, Б.Ч. Холлиев, A. S. Mallaev

    МақолаIon-surface interactions and analysisSurface Engineering and Applied Electrochemistry20070 иқтибос
    ABI