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Surface Engineering and Applied Electrochemistry

43 ta ish

Jurnal · ISSN 1068-3755

  1. Photoconductivity of silicon with multicharged clusters of manganese atoms [Mn]4

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    MaqolaInorganic Fluorides and Related CompoundsSurface Engineering and Applied Electrochemistry201010 iqtibos
    ABI

  2. Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, С. Б. Исамов, Н. Ф. Зикриллаев +4

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20208 iqtibos
    ABI

  3. The effect of silicon-germanium microheterojunctions on the parameters of silicon solar cells

    Б. А. Абдурахманов, Х. М. Илиев, С. А. Тачилин +2

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20107 iqtibos
    ABI

  4. Infrared quenching of photoconduction in silicon with multicharge manganese clusters

    M. K. Bachadyrchanov, С. Б. Исамов, Н. Ф. Зикриллаев +1

    MaqolaSilicon Nanostructures and PhotoluminescenceSurface Engineering and Applied Electrochemistry20136 iqtibos
    ABI

  5. Implementation of the Nanostate Phenomenon in Materials Science of Functional Nanocomposites Based on Industrial Polymers

    С. В. Авдейчик, V. A. Goldade, В. А. Струк +2

    MaqolaAdvanced Theoretical and Applied Studies in Material Sciences and GeometrySurface Engineering and Applied Electrochemistry20225 iqtibos
    ABI

  6. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 iqtibos
    ABI

  7. Interaction of radiation defects with nickel atom clusters in silicon

    Х. М. Илиев, Z.M. Saparniyazova, К. А. Исмайлов +2

    MaqolaGraphite, nuclear technology, radiation studiesSurface Engineering and Applied Electrochemistry20115 iqtibos
    ABI

  8. Enhancing the Efficiency of Silicon Solar Cells through Nickel Doping

    Z. T. Kenzhaev, Н. Ф. Зикриллаев, K. S. Ayupov +3

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20234 iqtibos
    ABI

  9. Effect of pressure on the electric properties of passivating coatings based on lead borosilicate glasses

    С. И. Власов, Fayzulla A. Saparov

    MaqolaMaterial Science and ThermodynamicsSurface Engineering and Applied Electrochemistry20114 iqtibos
    ABI

  10. Spectra of the energy levels of multicharged nanoclusters of manganese atoms in silicon

    М. К. Бахадырханов, С. Б. Исамов

    MaqolaLaser-Ablation Synthesis of NanoparticlesSurface Engineering and Applied Electrochemistry20113 iqtibos
    ABI

  11. Self-Oscillatory Processes in Silicon, Problems and Prospects for Research, and Their Application in Electronics

    Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, K. S. Ayupov +2

    MaqolaSemiconductor Quantum Structures and DevicesSurface Engineering and Applied Electrochemistry20243 iqtibos
    ABI

  12. Vibrations of photocurrent induced by IR light in silicon with quantum dots

    Э. У. Арзикулов, И. П. Парманкулов

    MaqolaSilicon Nanostructures and PhotoluminescenceSurface Engineering and Applied Electrochemistry20082 iqtibos
    ABI

  13. Electrical discharge machining of nonconductive materials

    А. А. Зарипов, Х. Б. Ашуров

    MaqolaAdvanced Machining and Optimization TechniquesSurface Engineering and Applied Electrochemistry20112 iqtibos
    ABI

  14. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 iqtibos
    ABI

  15. Codiffusion of Gallium and Phosphorus Atoms in Silicon

    Н. Ф. Зикриллаев, С. Б. Исамов, S. Koveshnikov +2

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20232 iqtibos
    ABI

  16. Effect of Manganese Atoms on the Magnetic Properties of Silicon

    O. E. Sattarov, A. Mavlyanov, A. An

    MaqolaMagnetic Properties of AlloysSurface Engineering and Applied Electrochemistry20232 iqtibos
    ABI

  17. Sensitive thermosensors on the basis of highly compensated silicon

    М. К. Бахадырханов, S. A. Valiev, S. S. Nasriddinov +1

    MaqolaGas Sensing Nanomaterials and SensorsSurface Engineering and Applied Electrochemistry20072 iqtibos
    ABI

  18. Elaboration of physical fundamentals of nanosized structures on the basis of S++Mn−− and Se++Mn−− molecule formation in silicon lattice

    М. К. Бахадырханов, U. X. Sodikov, Н. Ф. Зикриллаев +1

    MaqolaChalcogenide Semiconductor Thin FilmsSurface Engineering and Applied Electrochemistry20071 iqtibos
    ABI

  19. Silicon with Binary GexSi1 – x Compounds

    Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20241 iqtibos
    ABI

  20. The Effect of Gamma Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Solar Cells

    Z. T. Kenzhaev, Х. М. Илиев, В. Б. Оджаев +6

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20241 iqtibos
    ABI

  21. Surface state density at the semiconductor-glass interface

    Aslan Nasirov

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20081 iqtibos
    ABI

  22. Nonmonotonous capacitance-voltage characteristics in metal-glass-semiconductor structures

    С. И. Власов, Aslan Nasirov, О. О. Маматкаримов +1

    MaqolaSemiconductor materials and devicesSurface Engineering and Applied Electrochemistry20081 iqtibos
    ABI

  23. Gettering of gold by samarium and gadolinium in silicon

    D. É. Nazyrov

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20070 iqtibos
    ABI

  24. Obtaining films of CoSi2/Si (100) and the analysis of their morphology and stoichiometry through molecular-beam, solid-phase and reactive epitaxy methods

    Б. Э. Эгамбердиев, B. Ch. Holliev, A. S. Mallaev +2

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20070 iqtibos
    ABI

  25. Investigation of profiles of the distribution of ion-implanted Mn atoms using the rutherford back scattering method and the influence of thermal annealing on them

    Б. Э. Эгамбердиев, Б.Ч. Холлиев, A. S. Mallaev

    MaqolaIon-surface interactions and analysisSurface Engineering and Applied Electrochemistry20070 iqtibos
    ABI