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Semiconductor materials and devices

277 ta ish

  1. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 iqtibos
    ABI

  2. Applying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films

    D. M. Muradkabilov, Д. А. Ташмухамедова, Б. Е. Умирзаков

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201314 iqtibos
    ABI

  3. Effect of the O+2-ion bombardment on the TiN composition and structure

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +1

    MaqolaMetal and Thin Film MechanicsTechnical Physics201513 iqtibos
    ABI

  4. Comparison of electron irradiation on the formation of surface defects in situ and post thin-film LiF/Si(111) deposition

    U. B. Sharopov, Kulwinder Kaur, М. К. Курбанов +4

    MaqolaSemiconductor materials and devicesThin Solid Films202113 iqtibos
    ABI

  5. Fragmentation of sputtered Si n O+ m clusters: Release kinetic and dissociation energies

    Н. Х. Джемилев, С. Ф. Коваленко, L.F. Lifanova +2

    MaqolaIon-surface interactions and analysisBulletin of the Russian Academy of Sciences Physics200811 iqtibos
    ABI

  6. Kinetics of aggregations of F 2, F 3, X, and colloid centers in LiF/Si(111) films upon low-temperature annealing

    Utkirjon Sharopov, Б.Г. Атабаев, R. Djabberganov +1

    MaqolaElectron and X-Ray Spectroscopy TechniquesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201311 iqtibos
    ABI

  7. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +5

    MaqolaSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics20219 iqtibos
    ABI

  8. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    MaqolaSemiconductor Quantum Structures and DevicesLow Temperature Physics20259 iqtibos
    ABI

  9. Formation of defects on the surface of LiF crystals under irradiation with different ions mass

    Utkirjon Sharopov, Umid Gopparov, K. Yu. Rashidov +8

    MaqolaIon-surface interactions and analysisRadiation effects and defects in solids20229 iqtibos
    ABI

  10. Clusters of nickel atoms and controlling their state in silicon lattice

    М. К. Бахадырханов

    MaqolaSilicon Nanostructures and PhotoluminescenceSemiconductor Physics Quantum Electronics & Optoelectronics20189 iqtibos
    ABI

  11. Composition, morphology, and electronic structure of the nanophases created on the SiO2 Surface by Ar+ ion bombardment

    M. B. Yusupjanova, Д. А. Ташмухамедова, Б. Е. Умирзаков

    MaqolaIon-surface interactions and analysisTechnical Physics20167 iqtibos
    ABI

  12. Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

    Kh. Kh. Boltaev, J. Sh. Sodikjanov, Д. А. Ташмухамедова +1

    MaqolaSemiconductor materials and devicesTechnical Physics20177 iqtibos
    ABI

  13. Three-Band Simulation of the <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mi>g</a:mi> </a:math>-Factor of an Electron in an InAs Quantum Well in Strong Magnetic Fields

    G. Gulyamov, B. T. Abdulazizov, P. J. Baymatov

    MaqolaSemiconductor Quantum Structures and DevicesJournal of Nanomaterials20217 iqtibos
    ABI

  14. Oxidation kinetics and thermophysical properties of gamma irradiated silicon hexaboride

    M.N. Mirzayev, Khagani Farzulla Mammadov, В.А. Скуратов +6

    MaqolaAdvanced ceramic materials synthesisJournal of Alloys and Compounds20196 iqtibos
    ABI

  15. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    PreprintAdvancements in Semiconductor Devices and Circuit Design20216 iqtibos
    ABI

  16. Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

    Y. S. Ergashov, Burkhon Donaev, Sherzod Khudainazarov +1

    MaqolaElectron and X-Ray Spectroscopy TechniquesE3S Web of Conferences20216 iqtibos
    ABI

  17. Investigation of the dose dependence of the amorphization of a Si(111) surface bombarded with low-energy Na+ ions

    S. J. Nimatov, Д. С. Руми

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20146 iqtibos
    ABI

  18. Features of the chemical potential of a quasi-two-dimensional electron gas at low-temperatures

    P. J. Baymatov, A. G. Gulyamov, B. T. Abdulazizov +2

    MaqolaQuantum and electron transport phenomenaInternational Journal of Modern Physics B20216 iqtibos
    ABI

  19. Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films

    Utkirjon Sharopov, Kulwinder Kaur, М. К. Курбанов +5

    MaqolaIon-surface interactions and analysisSurface and Interface Analysis20226 iqtibos
    ABI

  20. Technology of production and photoelectric characteristics of AlB<sub>10</sub> heterojunctions based on silicon

    Numonjon Sultanov, Zokirjon Mirzajonov, Fakhriddin T. Yusupov

    MaqolaSemiconductor materials and interfacesE3S Web of Conferences20236 iqtibos
    ABI

  21. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    MaqolaSemiconductor materials and devicesTechnical Physics Letters20186 iqtibos
    ABI

  22. Effect of the Ba+ Ion Implantation on the Composition and Electronic Properties of MoO3/Mo(111) Films

    Б. Е. Умирзаков, Д. А. Ташмухамедова, Soadat Gulyamova +1

    MaqolaTransition Metal Oxide NanomaterialsTechnical Physics20206 iqtibos
    ABI

  23. Double-injection currents in Zn-compensated silicon pin structures

    P. M. Karageorgy‐Alkalaev, I. Z. Karimova, P. I. Knigin +1

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19766 iqtibos
    ABI

  24. Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film

    Д. А. Ташмухамедова, M. B. Yusupjanova, A. K. Tashatov +1

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20185 iqtibos
    ABI

  25. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 iqtibos
    ABI