Maqola

Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

Kh. Kh. BoltaevTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, UzbekistanJ. Sh. SodikjanovTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, UzbekistanД. А. ТашмухамедоваTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, UzbekistanБ. Е. УмирзаковTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, Uzbekistan

Technical Physicsjournal2017en

ABI

Annotatsiya

The composition and structure of nanodimensional Ga1 – xNa x As phases produced by implantation of Na+ ions into the near-surface area of GaAs have been studied by Auger electron spectroscopy and fast electron diffraction. It has been found that the thickness of the ternary epitaxial layer is 10–12 nm for ion energy E0 = 20 keV. The composition of the three-layer nanosystems is GaAs–Ga0.5Na0.5As–GaAs.

Mavzular

Semiconductor materials and devices Ion-surface interactions and analysis Nanowire Synthesis and Applications

Identifikatorlar

DOI: 10.1134/s1063784217120040

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