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8 ta ish

Ish: Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

  1. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics201319 iqtibos
    ABI

  2. Energy spectra of SiO2 nanofilms formed on a silicon surface by ion implantation

    Y. S. Ergashov, Д. А. Ташмухамедова, Э. А. Раббимов

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201516 iqtibos
    ABI

  3. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +3

    MaqolaMetal and Thin Film MechanicsTechnical Physics201315 iqtibos
    ABI

  4. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    MaqolaIon-surface interactions and analysisTechnical Physics201513 iqtibos
    ABI

  5. Superstructured ordering in Al x Ga1 − x As and Ga x In1 − x P alloys

    П. В. Середин, �. P. Domashevskaya, I. N. Arsentyev +3

    Maqola20136 iqtibos
    ABI

  6. Field-emission pumping of a ZnSe/CdSe/ZnSe nanoheterostructure with low-energy electrons through a surface potential barrier

    S. A. Masalov, A. V. Korotchenkov, V. P. Evtikhiev +1

    Maqola20152 iqtibos
    ABI

  7. Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures

    С. В. Тихов, О. Н. Горшков, M. N. Koryazhkina +2

    Maqola20162 iqtibos
    ABI

  8. Sarlavhasiz

    Boshqa1 iqtibos
    ABI