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Oʻzbek

Y. S. Ergashov

15 ta ish

Beruni State Technical University, Tashkent, 100095, Uzbekistan

  1. On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light

    Y. S. Ergashov, Д. А. Ташмухамедова, Б. Е. Умирзаков

    MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 iqtibos
    ABI

  2. Energy spectra of SiO2 nanofilms formed on a silicon surface by ion implantation

    Y. S. Ergashov, Д. А. Ташмухамедова, Э. А. Раббимов

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201516 iqtibos
    ABI

  3. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

    Y. S. Ergashov

    MaqolaElectron and X-Ray Spectroscopy TechniquesTechnical Physics201714 iqtibos
    ABI

  4. Structure and Properties of a Bilayer Nanodimensional CoSi2/Si/CoSi2/Si System Obtained by Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    MaqolaIon-surface interactions and analysisTechnical Physics201814 iqtibos
    ABI

  5. Escape Depth of Secondary and Photoelectrons from CdTe Films with a Ba Film

    Б. Е. Умирзаков, Д. А. Ташмухамедова, M. A. Tursunov +2

    MaqolaElectron and X-Ray Spectroscopy TechniquesTechnical Physics201912 iqtibos
    ABI

  6. Transmission of electromagnetic waves through thin Cu films

    Y. S. Ergashov, З. А. Исаханов, Б. Е. Умирзаков

    MaqolaAdvanced Memory and Neural ComputingTechnical Physics201610 iqtibos
    ABI

  7. Effect of surface microroughness on the composition and electronic properties of CdTe/Mo(111) films

    Y. S. Ergashov, Д. А. Ташмухамедова, Flyura Djurabekova +1

    MaqolaAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics201610 iqtibos
    ABI

  8. Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20188 iqtibos
    ABI

  9. Electron Spectroscopy of CdMeTe Nanostructures Created on CdTe Surface Under Ion Bombardment

    Y. S. Ergashov, Umirzakov Boltakhodja

    MaqolaAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20208 iqtibos
    ABI

  10. Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

    Y. S. Ergashov, Burkhon Donaev, Sherzod Khudainazarov +1

    MaqolaElectron and X-Ray Spectroscopy TechniquesE3S Web of Conferences20216 iqtibos
    ABI

  11. Effect of implantation of Ba+ and Nb+ ions on the morphology, composition, and emission properties of Мо (111)

    Y. S. Ergashov, Б. Е. Умирзаков

    MaqolaAdvanced Chemical Physics StudiesJournal of Communications Technology and Electronics20175 iqtibos
    ABI

  12. ZrO2 magnetron growth method and investigation of thin film growth

    Б.Д. Игамов, A.I. Kamardin, Y. S. Ergashov +1

    MaqolaSemiconductor materials and devicesAIP conference proceedings20241 iqtibos
    ABI

  13. Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

    Y. S. Ergashov, S. B. Donaev

    MaqolaIon-surface interactions and analysisJournal of Nano- and Electronic Physics20221 iqtibos
    ABI

  14. Experimental and theoretical study of the effect of bombardment with Ar<sup>+</sup> ions on the spectrum of valence electrons of a Si (111) single crystal

    Y. S. Ergashov, Б. Е. Умирзаков, N. A. Nurmatov +1

    MaqolaSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20210 iqtibos
    ABI

  15. Infuence of Ba atov adsorption and implanation of Ba-=SUP=-+-=/SUP=- ions on the electronic structure of single crystalline Ge

    Д. А. Ташмухамедова, Б. Е. Умирзаков, Y. S. Ergashov +2

    MaqolaIon-surface interactions and analysisЖурнал технической физики20220 iqtibos
    ABI