Journal of Communications Technology and Electronics
8 ta ish
Jurnal · ISSN 1064-2269
High-resolution X-ray photoelectron spectroscopy and characteristic electron-energy loss spectroscopy of the electronic structure of phosphorus-implanted silicon and quantum dots of silicon dioxide with silicon impurities
O. K. Kuvandikov, E.U. Arzikulov, А. И. Ковалев +1
MaqolaSilicon Nanostructures and PhotoluminescenceJournal of Communications Technology and Electronics20070 iqtibosABI