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Oʻzbek

Б.Д. Игамов

14 ta ish

Tashkent State Technical University, Tashkent, Uzbekistan

  1. Formation of n-type CoSi monosilicide film which can be used in instrumentation

    I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

    MaqolaSemiconductor materials and interfacesInternational Journal of Modern Physics B202222 iqtibos
    ABI

  2. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    MaqolaSemiconductor materials and interfacesApplied Solar Energy201921 iqtibos
    ABI

  3. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

    Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

    MaqolaSemiconductor materials and interfacesJournal of Nano- and Electronic Physics202213 iqtibos
    ABI

  4. Study of the physical nature of Mn4Si7 crystals formed by the diffusion method using an X-ray diffraction

    Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +5

    MaqolaX-ray Diffraction in CrystallographyJournal of Crystal Growth20248 iqtibos
    ABI

  5. Formation of targets and investigation of Mn4Si7 coatings produced by magnetron sputtering

    Б.Д. Игамов, Gunel Imanova, A.I. Kamardin +1

    MaqolaSemiconductor materials and interfacesBulletin of the Karaganda University Physics Series20237 iqtibos
    ABI

  6. Study of the electrophysical properties of higher manganese silicide (Mn4Si7) thin films and their temperature dependence

    I. R. Bekpulatov, Gunel Imanova, D.Kh. Nabiev +4

    MaqolaSemiconductor materials and interfacesCeramics International20255 iqtibos
    ABI

  7. Investigation of optical and electrophysical properties of Mn4Si7 coatings of different thickness

    Б.Д. Игамов, I. R. Bekpulatov, Gunel Imanova +2

    MaqolaSemiconductor materials and interfacesPhysics and Chemistry of Solid State20245 iqtibos
    ABI

  8. Study of Mn4Si7 silicide crystals obtained by hot isostatic pressing and spark plasma sintering methods in an X-ray diffractometer

    Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +7

    MaqolaSemiconductor materials and interfacesJournal of Materials Science Materials in Engineering20254 iqtibos
    ABI

  9. Electrophysical and thermoelectric properties and crystal structure of the formed Mn4Si7 thin vacuum coatings

    Б.Д. Игамов, Gunel Imanova, Vera Loboda +3

    MaqolaChalcogenide Semiconductor Thin FilmsOptical Materials X20244 iqtibos
    ABI

  10. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose

    А.С. Рысбаев, J. B. Khujaniyozov, M.T. Normuradov +3

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20203 iqtibos
    ABI

  11. Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing

    А.С. Рысбаев, I. R. Bekpulatov, Б.Д. Игамов +1

    MaqolaSemiconductor materials and interfacesEurasian journal of physics and functional materials20192 iqtibos
    ABI

  12. ZrO2 magnetron growth method and investigation of thin film growth

    Б.Д. Игамов, A.I. Kamardin, Y. S. Ergashov +1

    MaqolaSemiconductor materials and devicesAIP conference proceedings20241 iqtibos
    ABI

  13. Correlation between thickness-dependent morphology, phase structure, and vibrational properties of TiO2 thin films deposited via DC magnetron sputtering: A multi-technique characterization approach

    Б.Д. Игамов, I. R. Bekpulatov, A.M. Normamatov +2

    MaqolaZnO doping and propertiesNext Materials20250 iqtibos
    ABI

  14. Investigation of the formation mechanisms, crystallographic evolution and microstructural characteristics of the ZrSi2 phase on the Si(111) surface

    Б.Д. Игамов, I. R. Bekpulatov, A.I. Kamardin +4

    MaqolaSemiconductor materials and interfacesNext Materials20250 iqtibos
    ABI