Electrophysical and thermoelectric properties and crystal structure of the formed Mn4Si7 thin vacuum coatings

The necessary information on the formation of high manganese silicide (Mn 4 Si 7 ) coating by magnetron sputtering method is presented in this work. The technology and basic modes of creating the necessary targets for a magnetron sputtering device are presented. Targets were created by adding silicon and manganese powders in the required amount and heating them under vacuum conditions at high temperature and pressure. Thin silicide films (thin coatings) of different thicknesses were formed on the surface of silicon dioxide from the produced targets using the method of magnetron sputtering. The electrophysical and thermoelectric properties of the produced films were studied using physical and optical methods.Due to the change in the structure of the coatings during subsequent heat treatment, the Seebeck coefficient noticeably increases. • The necessary information on the formation of high manganese silicide (Mn 4 Si 7 ) coating by magnetron sputtering method is presented in this work. • Thin silicide films (thin coatings) of different thicknesses were formed on the surface of silicon dioxide from the produced targets using the method of magnetron sputtering. • The electrophysical and thermoelectric properties of the produced films were studied using physical and optical methods. • Due to the change in the structure of the coatings during subsequent heat treatment, the Seebeck coefficient noticeably increases.

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