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Lotin
Oʻzbek

M.T. Normuradov

11 ta ish

Beiruni State Technical University, ul. Universitetskaya 2, Tashkent, 100011, Uzbekistan

  1. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    MaqolaSemiconductor materials and interfacesTechnical Physics20149 iqtibos
    ABI

  2. Peculiarities of BaTiO<sub>3</sub> in electronic and X-Ray analysis

    M.T. Normuradov, Ш. Т. Хожиев, L.B. Akhmedova +3

    MaqolaSolid-state spectroscopy and crystallographyE3S Web of Conferences20236 iqtibos
    ABI

  3. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose

    А.С. Рысбаев, J. B. Khujaniyozov, M.T. Normuradov +3

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20203 iqtibos
    ABI

  4. Preparation of Calcium Titanate Perovskite Compound, Optical and Structural Properties

    Khujamkul Davranov, M.T. Normuradov, Muzaffar Davlatov +3

    MaqolaPerovskite Materials and ApplicationsEast European Journal of Physics20242 iqtibos
    ABI

  5. Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

    M.T. Normuradov, A. S. Risbaev, J. B. Khujaniyozov +1

    MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20202 iqtibos
    ABI

  6. The influence of laser annealing on the surface state of ion doped silicon

    I.N. Kodirov, A. K. Tashatov, Б. Е. Умирзаков +1

    MaqolaLaser Material Processing Techniques19950 iqtibos
    ABI

  7. The modification of structure and properties of semiconductors surface by active metals ions implantation

    А.С. Рысбаев, M.T. Normuradov, Б. Е. Умирзаков

    MaqolaIon-surface interactions and analysis19990 iqtibos
    ABI

  8. About silicide production in silicon during implantation of barium and alkali ions

    А.С. Рысбаев, M.T. Normuradov, S. S. Nasriddinov

    MaqolaSemiconductor materials and interfaces19990 iqtibos
    ABI

  9. Thermo-sensitive structures formed in silicon by ion implantation

    А.С. Рысбаев, M.T. Normuradov, I.P. Parmankulov +1

    MaqolaSilicon and Solar Cell Technologies19990 iqtibos
    ABI

  10. Influence of ion implantation and annealing on composition and structure of GaAs surface

    M.T. Normuradov

    MaqolaIon-surface interactions and analysisSemiconductor Physics Quantum Electronics & Optoelectronics20020 iqtibos
    ABI

  11. Composition and electronic structure of hidden nanoscale phases and layers of BaSi-=SUB=-2-=/SUB=- formed in the near-surface of Si

    Б. Е. Умирзаков, M.T. Normuradov, D. A. Normurodov +1

    MaqolaSemiconductor materials and interfacesФизика и техника полупроводников20220 iqtibos
    ABI