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M.T. Normuradov

Работ: 11

Beiruni State Technical University, ul. Universitetskaya 2, Tashkent, 100011, Uzbekistan

  1. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 9
    ABI

  2. Peculiarities of BaTiO<sub>3</sub> in electronic and X-Ray analysis

    M.T. Normuradov, Ш. Т. Хожиев, L.B. Akhmedova +3

    СтатьяSolid-state spectroscopy and crystallographyE3S Web of Conferences2023Цитирований: 6
    ABI

  3. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose

    А.С. Рысбаев, J. B. Khujaniyozov, M.T. Normuradov +3

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 3
    ABI

  4. Preparation of Calcium Titanate Perovskite Compound, Optical and Structural Properties

    Khujamkul Davranov, M.T. Normuradov, Muzaffar Davlatov +3

    СтатьяPerovskite Materials and ApplicationsEast European Journal of Physics2024Цитирований: 2
    ABI

  5. Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

    M.T. Normuradov, A. S. Risbaev, J. B. Khujaniyozov +1

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 2
    ABI

  6. The influence of laser annealing on the surface state of ion doped silicon

    I.N. Kodirov, A. K. Tashatov, Б. Е. Умирзаков +1

    СтатьяLaser Material Processing Techniques1995Цитирований: 0
    ABI

  7. The modification of structure and properties of semiconductors surface by active metals ions implantation

    А.С. Рысбаев, M.T. Normuradov, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysis1999Цитирований: 0
    ABI

  8. About silicide production in silicon during implantation of barium and alkali ions

    А.С. Рысбаев, M.T. Normuradov, S. S. Nasriddinov

    СтатьяSemiconductor materials and interfaces1999Цитирований: 0
    ABI

  9. Thermo-sensitive structures formed in silicon by ion implantation

    А.С. Рысбаев, M.T. Normuradov, I.P. Parmankulov +1

    СтатьяSilicon and Solar Cell Technologies1999Цитирований: 0
    ABI

  10. Influence of ion implantation and annealing on composition and structure of GaAs surface

    M.T. Normuradov

    СтатьяIon-surface interactions and analysisSemiconductor Physics Quantum Electronics & Optoelectronics2002Цитирований: 0
    ABI

  11. Composition and electronic structure of hidden nanoscale phases and layers of BaSi-=SUB=-2-=/SUB=- formed in the near-surface of Si

    Б. Е. Умирзаков, M.T. Normuradov, D. A. Normurodov +1

    СтатьяSemiconductor materials and interfacesФизика и техника полупроводников2022Цитирований: 0
    ABI