Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

The formation of thin nanoscale films of metal silicides MeSi (Me: Li, Rb, K and Cs) is studied by electron spectroscopy techniques, scanning electron microscopy, and slow electron diffraction. As a result of the high dose (1017 cm–2) implantation of low-energy (5 keV) Li, Rb, K and Cs ions into Si(111) and Si(100) single crystals and short-term thermal annealing, LiSi, RbSi, CsSi, KSi single-crystal silicide films are created in the silicon surface region. The optimal modes of ion implantation and annealing were determined for the formation of thin single-crystal films of metal silicides. The thickness of the silicide films is shown to increase with increasing energy of implanted ions and at a fixed energy to be proportional to the square root of the ion dose.

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