Работы, цитирующие эту работу

Работ: 2

Работа: Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

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   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 17

   ABIABI:AkademIndex/openalex/2021.article.000283

2. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

   I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

   СтатьяSemiconductor materials and interfacesE3S Web of Conferences2021Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.571863