M. T. Normurodov
Работ: 3
Karshi State University, 180103, Karshi, Uzbekistan
High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions
А.С. Рысбаев, M. T. Normurodov, A.M. Rakhimov +2
СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 1ABIOn the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing
А.С. Рысбаев, M. T. Normurodov, J. B. Khujaniyozov +2
СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 1ABI