J. B. Khujaniyozov
Работ: 6
Tashkent State Technical University, Tashkent, 100095, Uzbekistan
Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions
А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2
СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 12ABITheoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose
А.С. Рысбаев, J. B. Khujaniyozov, M.T. Normuradov +3
СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 3ABIStructure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons
M.T. Normuradov, A. S. Risbaev, J. B. Khujaniyozov +1
СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 2ABIOn the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing
А.С. Рысбаев, M. T. Normurodov, J. B. Khujaniyozov +2
СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 1ABI