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D. A. Normurodov

Работ: 5

Karshi State University, 180103, Karshi, Uzbekistan

  1. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 17
    ABI

  2. Investigation of optical and electrophysical properties of Mn4Si7 coatings of different thickness

    Б.Д. Игамов, I. R. Bekpulatov, Gunel Imanova +2

    СтатьяSemiconductor materials and interfacesPhysics and Chemistry of Solid State2024Цитирований: 5
    ABI

  3. On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing

    А.С. Рысбаев, M. T. Normurodov, J. B. Khujaniyozov +2

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 1
    ABI

  4. Composition and electronic structure of hidden nanoscale phases and layers of BaSi-=SUB=-2-=/SUB=- formed in the near-surface of Si

    Б. Е. Умирзаков, M.T. Normuradov, D. A. Normurodov +1

    СтатьяSemiconductor materials and interfacesФизика и техника полупроводников2022Цитирований: 0
    ABI

  5. Photoinduced Absorption Spectrum of GeSi/Si Quantum Dots in the Mid-IR and Terahertz Ranges under Resonant and Non-resonant Optical Pumping

    Danila Kararulov, Ratmir V. Ustimenko, G A Melentev +6

    СтатьяPhotonic and Optical Devices2024Цитирований: 0
    ABI