Gunel Imanova
Работ: 40
Institute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku AZ 1143, Azerbaijan
Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions
Б. Е. Умирзаков, I. R. Bekpulatov, Gunel Imanova +2
СтатьяIon-surface interactions and analysisEurasian journal of physics and functional materials2023Цитирований: 2ABIInvestigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si
Gunel Imanova, I. R. Bekpulatov
СтатьяSemiconductor materials and interfacesAmerican Journal of Nano Research and Applications2021Цитирований: 1ABI