Changes in the Structure and Properties of Silicon Carbide under Gamma Irradiation

AbstractThe paper presents the results of comprehensive study of SiC samples, which is one of the most promising materials in the field of semiconductor nanotechnology. The identification and qualitative analysis of a SiC sample was carried out by Raman spectroscopy using an In Via Raman spectrometer. Based on the spectrogram of X-ray phase analysis, the amorphous and crystalline phases of this substance were determined. At the same time, according to the peaks of the spectrogram, based on the Miller indices and inter planar distances dhkl, complex compounds are shown that are newly formed on the basis of silicon carbide. Using the method of IR spectroscopy, the IR spectra of SiC were obtained in the optical range ν = 400-4000 cm−1.Keywords: SiC samplesIR spectroscopyRaman spectroscopyX-ray phase analysisgamma irradiation Disclosure StatementNo potential conflict of interest was reported by the author(s).

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