Advanced Physical Research

Работ: 3

Журнал · ISSN 2663-8436

1. Analysis of the change in the composition of the CdTe surface upon implantation of О_2^+ ions and subsequent annealing

   A.A. Abduvaitov, Gunel Imanova

   СтатьяAdvanced Semiconductor Detectors and MaterialsAdvanced Physical Research2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2024.article.001533

2. STUDYING THE INFLUENCE OF PROTON IRRADIATION ON THE DISTRIBUTION PROFILE OF Pt AND Cr IN SURFACE LAYERS n-Si˂Pt˃, n-Si˂Сr˃ USING ELLIPSOMETRIC SPECTROSCOPY

   Sharifa B. Utamuradova

   СтатьяAdvanced Materials Characterization TechniquesAdvanced Physical Research2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.001560

3. Study of infrared quenching in silicide-silicon-silicide structures

   A. T. Mamadalimov, Makhmudhodzha Isaev

   СтатьяSemiconductor materials and interfacesAdvanced Physical Research2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.002817