Статья

Study of the electrophysical properties of higher manganese silicide (Mn4Si7) thin films and their temperature dependence

I. R. BekpulatovKarshi State University, 180119, Karshi, UzbekistanGunel ImanovaInstitute of Radiation Problems, Ministry of Science and Education Republic of Azerbaijan, 9 B. Vahabzade Str., AZ1143, Baku, AzerbaijanD.Kh. NabievKarshi State University, 180119, Karshi, UzbekistanБ.Д. ИгамовScientific and Technical Center with a Design Bureau and Pilot Production, Academy of Sciences of the Republic of Uzbekistan, 100125, UzbekistanA.I. KamardinScientific and Technical Center with a Design Bureau and Pilot Production, Academy of Sciences of the Republic of Uzbekistan, 100125, UzbekistanS. H. JabarovInstitute of Physics, Ministry of Science and Education Republic of Azerbaijan, Baku, AZ-1143, AzerbaijanY. I. AlıyevComposite Materials Science Research Center of Azerbaijan State, University of Economics (UNEC), AZ-1001, Baku, Azerbaijan

Ceramics Internationaljournal2025en

ABI

Аннотация

Аннотация отсутствует.

Темы

Semiconductor materials and interfaces Chalcogenide Semiconductor Thin Films nanoparticles nucleation surface interactions

Идентификаторы

DOI: 10.1016/j.ceramint.2025.02.093

Цитирования и источники

Цитирований: 5 Использованных источников: 27

Показатели — AkademScholar · Скоро