А.С. Рысбаев
19 ta ish
Tashkent State Technical University, 100095, Tashkent, Uzbekistan
On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon
А.С. Рысбаев, A. K. Tashatov, Sh. X. Dzhuraev +3
MaqolaSurface and Thin Film PhenomenaJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20113 iqtibosABITheoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose
А.С. Рысбаев, J. B. Khujaniyozov, M.T. Normuradov +3
MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20203 iqtibosABIHigh-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions
А.С. Рысбаев, M. T. Normurodov, A.M. Rakhimov +2
MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20201 iqtibosABIOn the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing
А.С. Рысбаев, M. T. Normurodov, J. B. Khujaniyozov +2
MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20211 iqtibosABI