Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation
А.С. РысбаевTashkent State Technical University, ul. Navoi 32, Tashkent, 100011, UzbekistanZh. B. KhuzhaniyazovTashkent State Technical University, ul. Navoi 32, Tashkent, 100011, UzbekistanA.M. RakhimovTashkent State Technical University, ul. Navoi 32, Tashkent, 100011, UzbekistanI. R. BekpulatovTashkent State Technical University, ul. Navoi 32, Tashkent, 100011, Uzbekistan
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The formation of nanosize silicides films by implantation of B, P, Ba, and alkali metal atoms in Si(111) and Si(100) followed by thermal annealing is studied by electron spectroscopy and slow-electron diffraction methods. It is shown that implantation of ions with a large dose D > 1016 cm−2 and short-term heating lead to the formation of thin silicides films with new surface superstructures: $$Si(111) - (\sqrt 3 \times \sqrt 3 )R30^ \circ - B$$ , Si(100)-2 × 2Ba, Si(111)-1 × 1P, etc.
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