Maqola

Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

M. T. NormurodovKarshi State University, 180103, Karshi, UzbekistanА.С. РысбаевTashkent State Technical University named after I.A. Karimov, 100095, Tashkent, UzbekistanI. R. BekpulatovTashkent State Technical University named after I.A. Karimov, 100095, Tashkent, UzbekistanD. A. NormurodovKarshi State University, 180103, Karshi, UzbekistanZ. A. TursunmetovaResearch Institute of Semiconductor Physics and Microelectronics at the National University named after Mirzo Ulugbek, 100057, Tashkent, Uzbekistan

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniquesjournal2021en

ABI

Annotatsiya

The formation of films of barium monosilicide BaSi and dicilicide BaSi2 on an n-Si(100) substrate of different thicknesses d = 8–800 nm during the low-energy high-dose implantation of barium ions in Si(100) and magnetron sputtering of bulk samples of barium silicides is studied by electron spectroscopy and low-energy electron diffraction. The optimal modes of the formation and band-energy parameters of BaSi and BaSi2 films on n-Si(100) are determined.

Mavzular

Semiconductor materials and interfaces Chalcogenide Semiconductor Thin Films Intermetallics and Advanced Alloy Properties

Identifikatorlar

DOI: 10.1134/s1027451022020318

Iqtiboslar va manbalar

17 ta iqtibos 12 ta foydalanilgan manba

Koʻrsatkichlar — AkademScholar · Tez orada