Kh. Kh. Boltaev
11 ta ish
Tashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, Uzbekistan
Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing
Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков
MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201414 iqtibosABIInfluence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures
Б. Е. Умирзаков, S. J. Nimatov, Kh. Kh. Boltaev
MaqolaSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20148 iqtibosABI