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Kh. Kh. Boltaev

Работ: 11

Tashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, Uzbekistan

  1. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2013Цитирований: 19
    ABI

  2. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing

    Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2014Цитирований: 14
    ABI

  3. Influence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures

    Б. Е. Умирзаков, S. J. Nimatov, Kh. Kh. Boltaev

    СтатьяSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2014Цитирований: 8
    ABI

  4. Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

    Kh. Kh. Boltaev, J. Sh. Sodikjanov, Д. А. Ташмухамедова +1

    СтатьяSemiconductor materials and devicesTechnical Physics2017Цитирований: 7
    ABI

  5. Composition of uncontrolled impurities and their chemical states and depth profiles at the Al-Si interface

    А.А. Абдувайитов, Kh. Kh. Boltaev

    СтатьяSemiconductor materials and interfacesTechnical Physics2015Цитирований: 3
    ABI

  6. Injectivity and Nuclearity Properties for Real C*-Algebras

    A. A. Rakhimov, M. E. Nurillaev, Kh. Kh. Boltaev

    СтатьяAdvanced Operator Algebra ResearchJournal of Mathematical Sciences2024Цитирований: 1
    ABI

  7. Analyzing the Change in the Composition of a CdTe Surface upon Implanting $$O_{2}^{ + }$$ Ions and Subsequent Annealing

    A. A. Abduvayitov, Kh. Kh. Boltaev, Б. Е. Умирзаков +2

    СтатьяAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics2024Цитирований: 1
    ABI

  8. Injectivity and Nuclearity Properties for Real C*-Algebras

    A. A. Rakhimov, M. E. Nurillaev, Kh. Kh. Boltaev

    СтатьяAdvanced Operator Algebra ResearchContemporary Mathematics Fundamental Directions2021Цитирований: 0
    ABI

  9. Study of the Composition of Uncontrolled Impurities and the Profiles of Their Distribution at the Ni–CdS Interface

    A. A. Abduvayitov, Kh. Kh. Boltaev, G. A. Rozikov

    СтатьяChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2022Цитирований: 0
    ABI

  10. THE RELATION BETWEEN REAL AW*-FACTORS AND ANTI-AUTOMORPHISMS OF INVOLUTIVE (I.E. WITH PERIOD 2) *-(COMPLEX) AW*-FACTORS

    Kh. Kh. Boltaev, F. B. Rasulova

    СтатьяAdvanced Operator Algebra ResearchZenodo (CERN European Organization for Nuclear Research)2025Цитирований: 0
    ABI

  11. THE RELATION BETWEEN REAL AW*-FACTORS AND ANTI-AUTOMORPHISMS OF INVOLUTIVE (I.E. WITH PERIOD 2) *-(COMPLEX) AW*-FACTORS

    Kh. Kh. Boltaev, F. B. Rasulova

    СтатьяAdvanced Algebra and LogicZenodo (CERN European Organization for Nuclear Research)2025Цитирований: 0
    ABI