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Kh. Kh. Boltaev

11 works

Tashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, Uzbekistan

  1. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    ArticleSemiconductor materials and interfacesTechnical Physics201319 citations
    ABI

  2. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing

    Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201414 citations
    ABI

  3. Influence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures

    Б. Е. Умирзаков, S. J. Nimatov, Kh. Kh. Boltaev

    ArticleSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20148 citations
    ABI

  4. Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

    Kh. Kh. Boltaev, J. Sh. Sodikjanov, Д. А. Ташмухамедова +1

    ArticleSemiconductor materials and devicesTechnical Physics20177 citations
    ABI

  5. Composition of uncontrolled impurities and their chemical states and depth profiles at the Al-Si interface

    А.А. Абдувайитов, Kh. Kh. Boltaev

    ArticleSemiconductor materials and interfacesTechnical Physics20153 citations
    ABI

  6. Injectivity and Nuclearity Properties for Real C*-Algebras

    A. A. Rakhimov, M. E. Nurillaev, Kh. Kh. Boltaev

    ArticleAdvanced Operator Algebra ResearchJournal of Mathematical Sciences20241 citations
    ABI

  7. Analyzing the Change in the Composition of a CdTe Surface upon Implanting $$O_{2}^{ + }$$ Ions and Subsequent Annealing

    A. A. Abduvayitov, Kh. Kh. Boltaev, Б. Е. Умирзаков +2

    ArticleAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics20241 citations
    ABI

  8. Injectivity and Nuclearity Properties for Real C*-Algebras

    A. A. Rakhimov, M. E. Nurillaev, Kh. Kh. Boltaev

    ArticleAdvanced Operator Algebra ResearchContemporary Mathematics Fundamental Directions20210 citations
    ABI

  9. Study of the Composition of Uncontrolled Impurities and the Profiles of Their Distribution at the Ni–CdS Interface

    A. A. Abduvayitov, Kh. Kh. Boltaev, G. A. Rozikov

    ArticleChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20220 citations
    ABI

  10. THE RELATION BETWEEN REAL AW*-FACTORS AND ANTI-AUTOMORPHISMS OF INVOLUTIVE (I.E. WITH PERIOD 2) *-(COMPLEX) AW*-FACTORS

    Kh. Kh. Boltaev, F. B. Rasulova

    ArticleAdvanced Operator Algebra ResearchZenodo (CERN European Organization for Nuclear Research)20250 citations
    ABI

  11. THE RELATION BETWEEN REAL AW*-FACTORS AND ANTI-AUTOMORPHISMS OF INVOLUTIVE (I.E. WITH PERIOD 2) *-(COMPLEX) AW*-FACTORS

    Kh. Kh. Boltaev, F. B. Rasulova

    ArticleAdvanced Algebra and LogicZenodo (CERN European Organization for Nuclear Research)20250 citations
    ABI