Article

Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

Б. Е. УмирзаковTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, UzbekistanД. А. ТашмухамедоваTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, UzbekistanD. M. MuradkabilovTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, UzbekistanKh. Kh. BoltaevTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, Uzbekistan

Technical Physicsjournal2013en

ABI

Abstract

A review of the experimental results on the study of the Si, GaAs, and CaF2 surface layers that are created using the low-energy ion implantation is presented. Optical and electron spectroscopy and microscopy are employed in the experiments.

Topics

Semiconductor materials and interfaces Silicon Nanostructures and Photoluminescence Ion-surface interactions and analysis

Identifiers

DOI: 10.1134/s1063784213060261

Citations and references

Cited by 19 4 references

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