Silicon and Solar Cell Technologies
568 works
Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions
А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2
ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 citationsABIInfluence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures
Б. Е. Умирзаков, S. J. Nimatov, Kh. Kh. Boltaev
ArticleSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20148 citationsABI